feb.1999 mitsubishi thyristor modules tm130dz/cz/pz-24,-2h high power general use insulated type outline drawing & circuit diagram dimensions in mm tm130dz/cz/pz-24,-2h ? i t (av) average on-state current .......... 130a ? v rrm repetitive peak reverse voltage ........ 1200/1600v ? v drm repetitive peak off-state voltage ........ 1200/1600v ? double arms ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 application dc motor control, nc equipment, ac motor control, contactless switches, electric furnace temperature control, light dimmers (dz type) (dz type) (bold line is connective bar.) 3 f 6.5 4?8 a1 k1 a2 k2 k2 g2 k1 g1 18 16 18 16 32 30 68.5 30 68.5 150 tab#110, t=0.5 40 39 32 23 7 a 1 cr 1 k 1 k 2 cr 2 a 2 k 2 g 2 k 1 g 1 (dz) (cz) (pz) a 1 cr 1 k 1 k 2 cr 2 a 2 k 2 g 2 k 1 g 1 a 1 cr 1 k 1 k 2 cr 2 a 2 k 2 g 2 k 1 g 1 20 6 9 label
feb.1999 absolute maximum ratings unit v v v v v v mitsubishi thyristor modules tm130dz/cz/pz-24,-2h high power general use insulated type 24 1200 1350 960 1200 1350 960 2h 1600 1700 1280 1600 1700 1280 symbol v rrm v rsm v r (dc) v drm v dsm v d (dc) parameter repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage non-repetitive peak off-state voltage dc off-state voltage unit a a a a 2 s a/ m s w w v v a c c v nm kgcm nm kgcm g conditions single-phase, half-wave 180 conduction, t c =78 c one half cycle at 60hz, peak value value for one cycle of surge current v d =1/2v drm , i g =1.0a, t j =125 c charged part to case main terminal screw m8 mounting screw m6 typical value ratings 205 130 2600 2.8 10 4 100 10 3.0 10 5.0 4.0 C40~+125 C40~+125 2500 8.83~10.8 90~110 1.96~3.92 20~40 300 symbol i t (rms) i t (av) i tsm i 2 t di/dt p gm p g (av) v fgm v rgm i fgm t j t stg v iso parameter rms on-state current average on-state current surge (non-repetitive) on-state current i 2 t for fusing critical rate of rise of on-state current peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature isolation voltage mounting torque weight voltage class electrical characteristics unit ma ma v v/ m s v v ma c/w c/w m w limits symbol i rrm i drm v tm dv/dt v gt v gd i gt r th (j-c) r th (c-f) parameter repetitive peak reverse current repetitive peak off-state current on-state voltage critical rate of rise of off-state voltage gate trigger voltage gate non-trigger voltage gate trigger current thermal resistance contact thermal resistance insulation resistance test conditions t j =125 c, v rrm applied t j =125 c, v drm applied t j =125 c, i tm =390a, instantaneous meas. t j =125 c, v d =2/3v drm t j =25 c, v d =6v, r l =2 w t j =125 c, v d =1/2v drm t j =25 c, v d =6v, r l =2 w junction to case (per 1/2 module) case to fin, conductive grease applied (per 1/2 module) measured with a 500v megohmmeter between main terminal and case min. 500 0.25 15 10 typ. max. 30 30 1.5 3.0 100 0.22 0.1
feb.1999 ? 10 ? 10 ? 10 0 10 0 10 1 10 1 10 0 10 4 10 3 10 2 10 1 10 ? 10 4 10 3 10 2 10 1 10 70 50 30 20 7 5 3 2 0 400 3200 10 1 100 800 1200 1600 2000 2400 2800 7 5 3 2 7 5 3 2 7 5 3 2 3 2 7 5 3 2 7 5 3 2 4 7 5 4 v gt =3.0v i gt = 100ma i fgm =4.0a p gm =10w v fgm =10v v gd =0.25v p g(av) = 3.0w t j =25? 7 5 3 2 7 5 3 2 7 5 3 2 0.25 0 7 5 3 2 0.05 0.10 0.15 0.20 0.6 7 5 3 2 7 5 3 2 7 5 3 2 0.8 1.2 2.0 2.2 1.6 1.0 1.4 1.8 t j =125? 0 0 200 200 160 40 80 120 120 80 40 160 q =30 120 90 180 q 360 60 150 50 0 120 200 40 70 80 90 110 130 160 q =30 60 90 q 360 180 120 resistive, inductive load per single element resistive, inductive load per single element performance curves maximum on-state characteristic gate characteristics maximum transient thermal impedance (junction to case) maximum average on-state power dissipation (single phase halfwave) limiting value of the average on-state current (single phase halfwave) rated surge (non-repetitive) on-state current on-state current (a) surge (non-repetitive) on-state current (a) on-state voltage (v) conduction time (cycles at 60hz) gate voltage (v) average on-state power dissipation (w) transient thermal impedance ( c/w) case temperature ( c) time (s) gate current (ma) average on-state current (a) average on-state current (a) mitsubishi thyristor modules tm130dz/cz/pz-24,-2h high power general use insulated type
feb.1999 0 0 200 40 400 320 160 80 120 240 160 80 q =30 60 90 q 360 270 dc 120 180 50 0 320 40 130 60 280 120 200 70 80 90 100 110 120 80 160 240 dc q =30 q 360 60 90 120 270 180 resistive, inductive load per single element resistive, inductive load per single element average on-state power dissipation (w) maximum average on-state power dissipation (rectangular wave) limiting value of the average on-state current (rectangular wave) average on-state current (a) average on-state current (a) mitsubishi thyristor modules tm130dz/cz/pz-24,-2h high power general use insulated type case temperature ( c)
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